PART |
Description |
Maker |
M67798LRA 67798LRA M67798 |
From old datasheet system 144-148MHz / 9.6V / 8W / FM PORTABLE RADIO 144-148MHz, 9.6V, 8W, FM PORTABLE RADIO 144 - 148MHz.6V的,瓦特短波,调频便携式收音
|
Mitsubishi Electric Semicon... MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
|
M67798LA 67798LA M67798 |
144-148MHz / 9.6V / 8W / FM PORTABLE RADIO From old datasheet system 144-148MHz, 9.6V, 8W, FM PORTABLE RADIO
|
Mitsubishi Electric Semicon... MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M67727 67727 |
144-148MHz /12.5V /60W / SSB MOBILE RADIO 144-148MHz,12.5V,60W, SSB MOBILE RADIO From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M57737 57737 |
From old datasheet system 144-148MHz 12.5V,30W,FM MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
KIA8262H KIA8262 |
BIPOLAR LINEAR INTEGRATED CIRCUIT (MAX POWER 43W QUAD BTL AUDIO POWER AMPLIFIER)
|
KEC[KEC(Korea Electronics)]
|
M57732 57732 |
144-175 MHz, 12.5V, 7W, FM PORTABLE RADIO 144-175MHZ, 12.5V,7W, FM POPHTABLE RADIO From old datasheet system 144-175MHz 12.5V /7W /FM PORTABLE RADIO 144-175MHz 12.5V,7W,FM PORTABLE RADIO
|
Mitsubishi Electric Corporation
|
AK5321024 |
262,144 Word by 32 Bit CMOS Dynamic Random Access Memory 262,144 Word2位CMOS动态随机存取存储器
|
Accutek Microcircuit, Corp.
|
VSC3144 |
6.5 Gbps 144 × 144 Asynchronous Crosspoint Switch 6.5 Gbps 144 】 144 Asynchronous Crosspoint Switch
|
Vitesse Semiconductor Corporation
|
HYB25M144180C HYB25R144180C HYB25M128160C |
144-Mbit direct RDRAM(144 Mbit 直接 RDRAM) 144-MBit Direct RDRAM(144 M位直接RDRAM) 144兆位的直接的RDRAM144米位直接的RDRAM 128-Mbit direct RDRAM(128 Mbit ?存? RDRAM)
|
SIEMENS AG
|
K4D553238F-JC K4D553238F-JC2A K4D553238F-JC33 K4D5 |
256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存 ; Accuracy: 1%; Current Rating:5A; Current Ratio:100:5 A; Terminal Type:Leaded RoHS Compliant: Yes 56Mbit GDDR SDRAM内存 8M X 32 DDR DRAM, 0.6 ns, PBGA144 FBGA-144 8M X 32 DDR DRAM, 0.6 ns, PBGA144 LEAD FREE, FBGA-144
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd. DiCon Fiberoptics, Inc. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
IS28F020-120PL IS28F020-120PLI IS28F020-120T IS28F |
262,144 x 8 CMOS FLASH MEMORY 256K X 8 FLASH 12V PROM, 90 ns, PDIP32 262,144 x 8 CMOS FLASH MEMORY 256K X 8 FLASH 12V PROM, 120 ns, PDSO32 CAP 33UF 6V 20% TANT SMD-3216-18 TR-7
|
Integrated Silicon Solution, Inc. ISSI[Integrated Silicon Solution, Inc]
|
ISPGAL22V10 |
144
|
Advanced Micro Devices
|